High Power 650nm Red Optical Transmitter Laser Diode Packaged in Tape Case

High Power 650nm Red Optical Transmitter Laser Diode Packaged in Tape Case

◉Features. 650nm Transmitter Low noise, Low distortion Low threshold current Built-in InGaAs/PIN monitor High reliability,Long operation life ◉ Applications. Test Equipment

  • Product Introduction

Absolute Maximum Ratings (Tc=25℃)
 

Parameter
Symbol
Min. Type
Max
Unit
Reverse Voltage(LD)
Vr(LD)
-
-
2
V
Forward Current(LD)
If(LD)
-
-
100
mA
Reverse Voltage(MPD)
Vr(PD)
-
-
15
V
Forward Current(MPD)
If(PD)
-
-
2
mA
Storage Temperature
Tstg
-40
-
+85
Operating Temperature
Topr
-20
-
+70
Lead Soldering Temperature/Time
Ts
-
260/10 or 360/5
-
℃/S
Fiber Bend Radius
R
30
-
-
mm


Transmitter Optical and Electrical Characteristics (Tc=25℃)
 

Parameter Symbol
Min.
Type
Max.
Unit Test Condition
Threshold Current Ith
3
-
15
mA
CW
   
-
-
50
mA
CW,T=70℃
Operating Voltage

Vf

-
1.1
1.5
V
 
Optical Output Power

Pf

2..0
-
3.0
mW
CW, If=Ith+20mA
Center Wavelength

λc

1540
1550
1560
nm
CW, If=Ith+20mA
Rise/Fall Time(20-80%)

Tr/Tf

-
-
120
pS
If=Ith, Po=Pf, 50 Ohm
Monitor Current

Im

100
-
1000
uA
CW, If=Ith+20mA
Capacitance

C

-
10
15
PF
VRD=5V, f=1MHz
Dark Current

Id

-
-
100
nA
VRD=5V
Spectral Width(-3dB)

Δλ

-
0.3
0.5
nm
CW, If= Ith+20mA
Slope Efficiency

SE

0.10
-
-
W/A
CW, If=Ith+20mA
Tracking Error

TE

-1.5
-
1.5
dB
CW, Im=Constant & 
If=Ith+20mA
Bandwidth

BW

1.25
2.5
-
GHZ
 
Relative Intensity Noise

RIN

-
-
-130
dB/Hz
 


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