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Professional Certifications
We have obtained ISO 9001 quality management system and ISO 14001 environmental management system certifications and are actively pursuing IATF 16949 International Automotive Task Force quality management system certification, laying a solid foundation for the application of LiDAR products in the automotive field.
Customized Services
We can provide customized production services for optical fiber products according to customer needs. We implement strict quality control at every stage of the manufacturing process to ensure stable and reliable product performance.
Production Equipment
We have established advanced chip packaging production lines and automatic coupling production lines. Key equipment includes: eutectic die bonding machines, fully automatic eutectic machines, parallel sealing welding machines, TO automatic sealing machines, OSA automatic transmitter coupling machines, and OSA automatic receiver coupling machines.
Professional Team
We maintain close collaborations with renowned research institutions and universities such as the Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Xiamen University, Shenzhen University, Fuzhou University, and Mingde Innovation Laboratory, bringing together a group of experts and technical personnel with long-term experience in optical device research and development.
|
Field |
Content |
|
Model Number |
APT155M-3.3V-T046-BL-5PIN-Vapd |
|
Brand Name |
Belycomm |
|
Mounting Type |
Universal Type |
|
Description |
Coaxial PD Photodiode Devices |
|
Type |
PHOTODIODE |
|
Place Of Origin |
Fujian, China |
|
Package Type |
Through Hole |
|
Package / Case |
Coaxial |
|
Operating Temperature |
-40~+85℃ |
|
Application |
Ethernet/ESCON/SDH/SONET/ATM |
|
Supplier Type |
Original Manufacturer, ODM, Agency, Retailer |
|
Media Available |
Datasheet, Photo |
Industry standard TO-46 package with cap lens
1
>>
Optimized for fiber optic application
2
>>
Sensitive area 120um diameter
3
>>
High coupling efficiency to multi-mode fibers directly
4
>>
Low dark current
5
>>
Low capacitance
6
|
Parameter |
Symbol |
Unit |
Typical Value |
|
Spectral range |
λ |
Nm |
800-1700 |
|
Active diameter |
Φ |
Um |
75 |
|
Responsivity |
Re (VR=0V, λ=1310nm) |
MA/mW |
0.85 |
|
Re (VR=0V, λ=1550nm) |
MA/mW |
0.90 |
|
|
Response time |
Tr (RL=50Ω,VR=5V) |
Ps |
140 |
|
Band width(-3dB) |
BW (RL=50Ω,VR=5V) |
GHZ |
2.5 |
|
Dark current |
Id (VR=0V) |
PA |
0.2 |
|
Id (VR=5V) |
PA |
30 |
|
|
Reverse Breakdown voltage |
VBR (IR=10μA) |
V |
40 |
|
Junction capacitance |
Cj (f=1MHz, VR=0V) |
PF |
400 |
|
Cj (f=1MHz, VR=5V) |
PF |
1 |
|
|
Saturated Optical Power |
Ps(VR=5V) |
MW |
3.5 |
|
2nd Order Inter-modulation distortion |
CSO(Two tones, RL=50Ω,1mW, VR=5V ) |
DBc |
-75 |
|
Operating voltage |
VR |
V |
0-10 |
|
Shunt resistance |
Rsh (VR=10mV) |
GΩ |
50 |
Absorption of Light: When light strikes the InGaAs material, its energy is absorbed by the semiconductor. This absorption excites electrons from the valence band, where they are bound to atoms, to the conduction band, where they are free to move.
Generation of Electron-Hole Pairs: The absorption of light energy displaces electrons from the valence band, leaving behind positively charged holes. These electron-hole pairs, also known as exciton pairs, are the fundamental building blocks of electrical current.
Presence of a P-N Junction: A P-n junction, a critical component of InGaAs photodetectors, plays a pivotal role in separating the electron-hole pairs. The p-n junction is formed by joining a p-type semiconductor, where holes are the majority charge carriers, with an n-type semiconductor, where electrons are the majority charge carriers.
Creation of an Electric Field: The p-n junction establishes an electric field that extends across the depletion region, the area where the majority of charge carriers have been depleted due to recombination. This electric field acts as a driving force, separating the electron-hole pairs.
Separation of Electron-Hole Pairs: The electric field within the depletion region pulls electrons towards the n-type region and holes toward the p-type region. This separation of charge carriers is essential for generating an electrical current.
Movement of Charge Carriers: The separated electrons and holes, driven by the electric field, drift towards their respective electrodes. This movement of charge carriers constitutes an electric current.
Generation of an Electric Current: The flow of electrons and holes through the p-n junction results in an electric current. The magnitude of this current is directly proportional to the intensity of the incident light.
Conversion of Light into Electrical Signal: The generated electric current, whose strength is proportional to the incident light intensity, serves as the electrical signal output of the photodetector. This signal can be amplified and processed for various applications.
Laser distance measurement (LiDAR) & 3D scanners: Maximize the range and precision of your systems
Spectroscopy: Precise measurements for material analysis, environmental monitoring, and medical diagnostics.
Optical communication: Ensure the highest signal quality in OTDR and satellite networks.
Scientific applications: Astronomy, biology, and materials research.
Temperature and power measurement
Photon counter
|
Quantity (pieces) |
1 - 100 |
101 - 1000 |
1001 - 10000 |
> 10000 |
|
Lead time (days) |
10 |
16 |
18 |
To be negotiated |
|
Selling Units |
Single item |
|
Single Package Size |
29X22.5X5.5 cm |
|
Single Gross Weight |
1.000 KG |
As one of the most professional ingaas photodiode to46 manufacturers and suppliers in China, we're featured by quality products and good price. Please rest assured to buy customized ingaas photodiode to46 from our factory.
300 m InGaAs Mini Photodiode TO25, 45 m 6G InGaAs Photodiode TO46, 500 m InGaAs Photodiode TO46(0/10)
