Belycomm BLPD-RA-2HBR-BG-Si Coaxial Hole Si Photodiode Receptacle 400nm-1100nm Photosensitive Surface 200um Operating Temp
Features： -High responsivity -Low dark current, Low capacitance -Plug-in structure -Laser Welding, High reliability And Long operation life
- Product Introduction
Absolute Maximum Ratings (Tc=25℃)
| Parameter | Symbol | Min. | Type |
Max. |
Unit |
| Saturated Optical Power |
Ps |
- |
5 |
- |
mW |
| Forward Current |
If |
- |
- |
5 |
mA |
| Reverser Voltage |
Vr |
- |
5 |
15 |
V |
| Operating Case Temperature |
Top |
-40 |
- |
+85 |
ºC |
| Storage Temperature |
Tstg |
-40 |
- |
+85 |
ºC |
| Lead Soldering(Temperature/Time) |
- |
- |
260/10 |
- |
ºC/Sec |
Optical and Electrical Characteristics (Tc=25℃)
| Parameter | Symbol |
Min. |
Type |
Max. |
Unit |
Test condition |
| Operating Wavelength | λ |
400 |
- |
1100 |
nm |
|
| Responsivity | Res | 0.17 | - | - | A/W | Vr=10V,λ=405nm |
|
0.30 |
- | - | A/W | |||
|
0.45 |
- | - | A/W | |||
|
0.08 |
- | - | A/W | |||
| Dark Current |
Id |
- |
0.1 |
1.0 |
nA |
Vr=10V |
| Reverse Breakdown voltage |
VBR |
- |
- |
60 |
V |
I=10uA |
| Junction Capacitance |
CJ |
- |
1.0 |
- |
pF |
Vr=10V,f=1MHz |
| Response time |
TR |
- |
- |
150 |
pS |
Vr=10V,50Ω |
| Bandwidth(-3dB) |
Bw |
- |
2.5 |
- |
GHz |
Vr=10V,50Ω |
| Shunt resistance |
Rsh |
- |
- |
100 |
GΩ |
Vr=10mV |
Outline Diagram and Pin Assignment
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