32μm 10G InGaAs Photodiode TO46

 

 

• High Responsivity (≥0.7A/W): Ensures efficient signal conversion, reducing power consumption for large-scale optical module production-ideal for wholesale InGaAs Photodiode TO46 buyers focused on energy efficiency.

• Low Dark Current (≤1nA @5V): Minimizes signal noise, critical for high-precision telecom and sensing applications. This advantage lowers failure rates for bulk deployments.

• Low Capacitance (≤0.25pF): Enables stable 10G bandwidth performance, meeting the speed requirements of 10G SFP+ modules and data center networks.

• Laser Welding & TO-CAN Package: Enhances mechanical stability and thermal resistance (-40~85°C operating temp), ensuring a long service life (≥50,000 hours) and reducing replacement costs for bulk purchase InGaAs Photodiode clients.

• Low Return Loss (≥35dB): Reduces signal reflection, improving system integrity-essential for telecom infrastructure projects.

 

 

• Telecom Networks: Compatible with SDH/SONET systems, supporting high-speed signal reception in long-haul fiber optic links-perfect for high reliability 32μm InGaAs Photodiode for telecom procurement.

• 10G SFP+ Optical Modules: Used in data center transceivers to convert optical signals to electrical signals, with low capacitance (≤0.25pF) ensuring minimal signal loss.

• Fiber Optic Sensing: Ideal for industrial sensing systems (e.g., laser ranging, temperature monitoring) thanks to its wide operating wavelength (1100-1650nm) and low dark current.

• Industrial Automation: Integrated into optical communication equipment for factory automation, where long operation life (via laser welding) reduces maintenance costs for wholesale InGaAs Photodiode TO46 buyers.

 

Selling Units	Single item
Single package size	20X15X5 cm (Flexible packaging, suitable for international transportation)
Single gross weight	0.250 KG

Quantity (pieces)	1 - 100	101 - 1000	1001 - 10000	> 10000
Lead time (days)	14	20	30	To be negotiated

We offer custom InGaAs Photodiode ODM solutions to match your specific requirements:

• Customizable Parameters: Photosensitive area diameter (32μm/50μm/75μm), package type (TO46/TO56), lead length, and lens design.

• Development Cycle: 7-15 days (sample first; bulk production starts after sample approval).

 

Parameter	Symbol	Min.	Type	Max.	Unit
Saturation power	Ps	3	-	-	dBm
Forward Current	If	-	-	10	mA
Reverser Voltage	Vr	-	5	15	V
Operating Case Temperature	Top	-40	-	85	℃
Storage Temperature	Tstg	-40	-	85	℃
Lead Soldering (Temperature/Time)	-	-	260/10	-	℃/Sec

 

Parameter	Symbol	Min.	Type	Max.	Unit	Test condition
Operating Wavelength	λ	1100	-	1650	nm
Responsivity	R	0.7	-	-	A/W	Vr=5V,λ=1310nm
Dark Current	Id	-	0.2	1	nA	Vr=5V
Capacitance	C	-	-	0.25	pF	Vr=5V,f=1MHz,case open
Bandwidth	Bw	10	-	-	GHz	Vr=5V,50 load with lead length=6mm,case open
Optical Return Loss	RL	35	-	-	dB	λ=1310nm

 

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